document number: 93527 for technical questions, contact: ind-modules@vishay.com www.vishay.com revision: 20-may-09 1 standard recovery diodes generation 2 do-5 (stud version), 80 a 80pf(r)...(w) high voltage series vishay high power products features ? high surge current capability ? designed for a wide range of applications ? stud cathode and stud anode version ? wire version available ? low thermal resistance ? compliant to rohs directive 2002/95/ec ? designed and qualified for multiple level typical applications ? converters ? power supplies ? machine tool controls ? welding ? any high voltage input rectification bridge electrical specifications product summary i f(av) 80 a do-203ab (do-5) 8 0pf(r)... 8 0pf(r)...w do-203ab (do-5) major ratings and characteristics parameter test conditions values units i f(av) 80 a t c 123 c i f(rms) 126 a i fsm 50 hz 1200 a 60 hz 1250 i 2 t 50 hz 7100 a 2 s 60 hz 6450 v rrm range 1400 to 1600 v t j - 55 to 150 c voltage ratings type number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm maximum at t j = 150 c ma 80pf(r)...(w) 140 1400 1650 4.5 160 1600 1900
www.vishay.com for technical questions, contact: ind-modules@vishay.com document number: 93527 2 revision: 20-may-09 80pf(r)...(w) high voltage series vishay high power products standard recovery diodes generation 2 do-5 (stud version), 80 a notes (1) recommended for pass-through holes (2) torque must be appliable only to hexagon and not to plastic structure, recommended for holed heatsink forward conduction parameter symbol test conditions values units maximum average forward current at case temperature i f(av) 180 conduction, half sine wave 80 a 123 c maximum rms forward current i f(rms) 126 a maximum peak, one cycle forward, non-repetitive surge current i fsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = 150 c 1200 a t = 8.3 ms 1250 t = 10 ms 100 % v rrm reapplied 1000 t = 8.3 ms 1050 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 7100 a 2 s t = 8.3 ms 6450 t = 10 ms 100 % v rrm reapplied 5000 t = 8.3 ms 4550 maximum i 2 t for fusing i 2 t t = 0.1 ms to 10 ms, no voltage reapplied 71 000 a 2 s low level value of threshold voltage v f(to) (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 0.73 v low level value of forward slope resistance r f (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 3.0 m maximum forward voltage drop v fm i pk = 220 a, t j = 25 c, t p = 400 s rectangular wave 1.46 v thermal and mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 55 to 150 c maximum thermal resistance, junction to case r thjc dc operation 0.30 k/w thermal resistance, case to heatsink r thcs mounting surface, smooth, flat and greased 0.25 maximum allowable mounting torque (+ 0 %, - 10 %) not lubricated thread, tighting on nut (1) 3.4 (30) n m (lbf in) lubricated thread, tighting on nut (1) 2.3 (20) not lubricated thr ead, tighting on hexagon (2) 4.2 (37) lubricated thread, tighting on hexagon (2) 3.2 (28) approximate weight 15.8 g 0.56 oz. case style see dimensions - link at the end of datasheet do-203ab (do-5)
document number: 93527 for technical questions, contact: ind-modules@vishay.com www.vishay.com revision: 20-may-09 3 80pf(r)...(w) high voltage series standard recovery diodes generation 2 do-5 (stud version), 80 a vishay high power products note ? the table above shows the increment of thermal resistance r thjc when devices operate at diffe rent conduction angles than dc fig. 1 - current ratings characteristics fig. 2 - maximum non-repetitive surge current fig. 3 - maximum non-repetitive surge current fig. 4 - forward voltage drop characteristics r thjc conduction conduction angle sinusoidal conduction rect angular conduction test conditions units 180 0.14 0.10 t j = t j maximum k/w 120 0.16 0.17 90 0.21 0.22 60 0.30 0.31 30 0.50 0.50 0 102030405060708090 110 120 130 140 150 160 maximum allowable case temperature (c) average forward current (a) 80pf(r) series 140 to 160 rthjc = 0.3 k/w 180 sine 300 400 500 600 700 800 900 1000 1100 110100 peak hal f sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 70hf(r) series initial t = t max. @ 60 hz 0.0083 s @ 50 hz 0.0100 s at any rated load condition and with rated v applied following surge. rrm j j 80pf(r) series 140 to 160 200 300 400 500 600 700 800 900 1000 1100 1200 0.01 0.1 1 peak half sine wave forward current (a) pulse train duration (s) maxi mum non repetitive surge current 70hf(r) series initial t = t max. no voltage reapplied rated v reapplied rrm versus pulse train duration. j j 80pf(r) series 140 to 160 0 0.5 1 1.5 2 2.5 3 3.5 4 1 10 100 1000 instantaneous forward current (a) instantaneous forward voltage (v) tj = 25c tj = tj max 70hf(r) series (140 to 160) 80pf(r) series 140 to 160
www.vishay.com for technical questions, contact: ind-modules@vishay.com document number: 93527 4 revision: 20-may-09 80pf(r)...(w) high voltage series vishay high power products standard recovery diodes generation 2 do-5 (stud version), 80 a fig. 5 - thermal impedance z thjc characteristics ordering information table square wave pulse duration (s) transient thermal impedance z thjc (k/w) 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 steady state value rthjc = 0.3 k/w (dc operation) 80pf(r) series 80pf(r) series 140 to 160 1 - 80 = standard device device code 5 13 24 80 pf r 160 w 2 - pf = plastic package 3 - none = stud normal polarity (cathode to stud) r = stud reverse polarity (anode to stud) 4 - voltage code x 10 = v rrm (see voltage ratings table) 5 - none = standard terminal (see dimensions for 80pf(r)... - link at the end of datasheet) w = wire terminal (see dimensions for 80pf(r)...w - link at the end of datasheet) links to related documents dimensions www.vishay.com/doc?95345
document number: 95345 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 26-aug-08 1 do-203ab (do-5) fo r 50pf(r)...(w), 80pf(r)...(w) and 95pf(r)...(w) series outline dimensions vishay semiconductors dimensions for 80pf(r), 50pf(r) and 95pf(r) series in millimeters note ? for metric device please contact factory ? 15.6 max. ? 16.8 max. 18.9 + 0.1 0.0 3.5 min. 2.4 ref. 4 min. 4.2 max. 6.45 min. for metric devices: m6 x 1 ? 3 plastic cap. 1.2 max. 11 0.4 11.45 max. 1/4"28-unf-2a 17.25 max. 25.4 max.
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 95345 2 revision: 26-aug-08 outline dimensions vishay semiconductors do-203ab (do-5) for 50pf(r)...(w), 80pf(r)...(w) and 95p f(r)...(w) series dimensions for 80pf(r)...(w), 50pf (r)...(w) and 95pf(r)...(w) series in millimeters note ? for metric device please contact factory ? 15.6 max. ? 16.8 max. 18.9 + 0.1 0.0 2.4 ref. for metric devices: m6 x 1 2.05 max. plastic cap. 17.25 max. 1/4"-28-unf-2a 11 0.4 11.45 max. 25.4 max.
document number: 95345 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 26-aug-08 3 outline dimensions do-203ab (do-5) for 50pf(r)...(w), 80pf(r)...(w) and 95pf(r)...(w) series vishay semiconductors dimensions for 52pf(r), 82pf(r) and 97pf(r) series in millimeters note ? for metric device please contact factory 2.4 ref. for metric devices: m6 x 1 6.6 mm 2 external lead with blue or red sleeve insulation ? 7 max. 12.2 max. plastic cap. 1/4"-28-unf-2a 11 0.4 11.45 max. 123 134.4
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